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NDS9933A
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
Features *
-2.8 A, -20 V. RDS(on) = 0.14 @ VGS = -4.5 V RDS(on) = 0.19 @ VGS = -2.7 V RDS(on) = 0.20 @ VGS = -2.5 V.
* High density cell design for extremely low RDS(on). * High power and current handling capability in a
widely used surface mount package.
* Dual MOSFET in surface mount package.
D2 D1 D1
D2
5 6 4 3 2 1
G1 SO-8 S1 G1 S2
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25C unless otherwise noted
Parameter
NDS9933A
-20
(Note 1a)
Units
V V A W
8 -2.8 -10 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 C
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Outlines and Ordering Information
Device Marking
NDS9933A
(c)1999 Fairchild Semiconductor Corporation
Device
NDS9933A
Reel Size
13''
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A
NDS9933A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min Typ Max Units
-20 -25 -1 100 -100 V mV/C A nA nA
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8A,TJ=125C VGS = -2.7 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A
-0.4
-0.65 4 0.10 5 0.15 0 0.13 5 0.14 0
-1
V mV/C
0.140 0.240 0.190 0.200
ID(on) gFS
On-State Drain Current Forward Transconductance
VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.8 A
-10 6.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
405 170 45
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6
6.5 20 31 21
13 35 50 35 8.5
ns ns ns ns nC nC nC
VDS = -5 V, ID = -2.8 A, VGS = -4.5 V,
6 0.8 1.3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3 -0.78 -1.2
A V
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a. 78 C/W on a 0.5 in pad of 2oz copper.
O
2
b. 125 C/W on a 0.02 in pad of 2oz copper.
O
2
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
NDS9933A Rev. A
NDS9933A
Typical Characteristics
15 -ID , DRAIN-SOURCE CURRENT (A)
-2.7 -2.5
RDS(ON) , NORMALIZED
12
-4.0
-3.0
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-3.5
2 1.8
VGS = -2.0V
1.6 1.4 1.2 1 0.8
9
-2.5 -2.7 -3.0 -3.5 -4.0 -4.5
6
-2.0
3
-1.5
0 0 1 2 3 4 5 -V DS , DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
-I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.5
1.6 DRAIN-SOURCE ON-RESISTANCE
1.4
V GS = -4.5V
R DS(ON) ,ON-RESISTANCE(OHM)
I D = -2.8A
I D = -1.4A
0.4
RDS(ON) , NORMALIZED
1.2
0.3
1
0.2
TJ = 125C 25C
0.8
0.1
0.6 -50
-25
0
25
50
75
100
125
150
0 1 2 3 4 5 -VGS ,GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (C)
Figure 3. On-Resistance Variation with Temperature.
10
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
VDS = -5V
-I D , DRAIN CURRENT (A) 8
TA = -55C 25C 125C
-I S , REVERSE DRAIN CURRENT (A)
VGS = 0V
1
TJ = 125C
0.1
6
25C -55C
4
0.01
2
0.001
0
0.0001
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS , GATE TO SOURCE VOLTAGE (V)
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
NDS9933A Rev. A
NDS9933A
Typical Characteristics
5 -V GS , GATE-SOURCE VOLTAGE (V)
(continued)
1000
I D = -2.8A
4
VDS = -5V -15V
CAPACITANCE (pF)
600 400 200 100 50
C iss
3
Coss
2
1
f = 1 MHz VGS = 0 V
0.2 0.5 1 2 5
C rss
0
0
2
4 Q g , GATE CHARGE (nC)
6
8
20 0.1
10
20
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
20 10 -I D, DRAIN CURRENT (A) 5 2 1 0.5
R (O DS L N) IT IM
10 0 1m s s 10 ms
10s 1s DC
POWER (W)
30 25 20 15 10 5 0 0.01
10
SINGLE PULSE RJA =135 C/W TA = 25C
0m s
0.1 0.05
VGS = -4.5V SINGLE PULSE RJA =135C/W T A = 25C A
0.2 0.5 1 2 5 10 20 40
0.01 0.1
0.1
0.5
10
50 100
300
- V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 135C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t2
0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design.
NDS9933A Rev. A
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label Customized Label
F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959
SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.0774 0.6060 L86Z Rail/Tube 95 530x130x83 30,000 0.0774 F011 TNR 4,000 13" Dia 343x64x343 8,000 0.0774 0.9696 D84Z TNR 500 7" Dia 184x187x47 1,000 0.0774 0.1182
F852 NDS 9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample
LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC:
F63TNLabel F63TN Label ESD Label
(F63TNR)3
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOIC(8lds) (12mm)
A0
6.50 +/-0.10
B0
5.30 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.60 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.1 +/-0.10
T
0.450 +/0.150
Wc
9.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
(c) 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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Rev. D

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